Optrans America Expands Quad InGaAs Photodiode Portfolio from 1.7 µm to 2.6 µm 

1.7 µm-class: one monolithic InGaAs die divided into four quadrants 2.6 µm-class: four discrete extended-InGaAs detector elements in a 2 x 2 arrangement Monolithic four-quadrant and four-discrete-element architectures, with TO and surface-mount package options, support beam positioning, optical alignment and extended-infrared sensing LATHAM, NEW YORK – September, 2026 – Optrans America Corporation today announced an […]